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IMBF170R1K0M1XTMA1
manufacturer:
Infineon Technologies
Description:
SICFET N-CH 1700V 5.2A TO263-7
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.7V @ 1.1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Gate Charge (Qg) (Max) @ Vgs:
5 NC @ 12 V
Rds On (Max) @ Id, Vgs:
1000mOhm @ 1A, 15V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
12V, 15V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
1700 V
Vgs (Max):
+20V, -10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
275 PF @ 1000 V
Mounting Type:
Surface Mount
Series:
CoolSiC™
Supplier Device Package:
PG-TO263-7-13
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
5.2A (Tc)
Power Dissipation (Max):
68W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
IMBF170
Model Number:
IMBF170R1K0M1XTMA1
Introduction
N-Channel 1700 V 5.2A (Tc) 68W (Tc) Surface Mount PG-TO263-7-13
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