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G3R75MT12J
manufacturer:
GeneSiC Semiconductor
Description:
SIC MOSFET N-CH 42A TO263-7
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.69V @ 7.5mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Gate Charge (Qg) (Max) @ Vgs:
54 NC @ 15 V
Rds On (Max) @ Id, Vgs:
90mOhm @ 20A, 15V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V
Package:
Tube
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
±15V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1560 PF @ 800 V
Mounting Type:
Surface Mount
Series:
G3R™
Supplier Device Package:
TO-263-7
Mfr:
GeneSiC Semiconductor
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)
Power Dissipation (Max):
224W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
G3R75
Model Number:
G3R75MT12J
Introduction
N-Channel 1200 V 42A (Tc) 224W (Tc) Surface Mount TO-263-7
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