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AIMW120R045M1XKSA1
manufacturer:
Infineon Technologies
Description:
SICFET N-CH 1200V 52A TO247-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Vgs(th) (Max) @ Id:
5.7V @ 10mA
Series:
Automotive, AEC-Q101, CoolSiC™
Vgs (Max):
+20V, -7V
Gate Charge (Qg) (Max) @ Vgs:
57 NC @ 15 V
Supplier Device Package:
PG-TO247-3
Rds On (Max) @ Id, Vgs:
59mOhm @ 20A, 15V
Mfr:
Infineon Technologies
Operating Temperature:
-40°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
2130 PF @ 800 V
Drain To Source Voltage (Vdss):
1200 V
Power Dissipation (Max):
228W (Tc)
Package / Case:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
52A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
AIMW120
Model Number:
AIMW120R045M1XKSA1
Introduction
N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-3
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