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IGOT60R070D1AUMA3
manufacturer:
Infineon Technologies
Description:
GANFET N-CH
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.6V @ 2.6mA
Input Capacitance (Ciss) (Max) @ Vds:
380 PF @ 400 V
Series:
CoolGaN™
Vgs (Max):
-10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Supplier Device Package:
PG-DSO-20-87
Rds On (Max) @ Id, Vgs:
-
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
-
Power Dissipation (Max):
125W (Tc)
Package / Case:
20-PowerSOIC (0.433", 11.00mm Width)
Drain To Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
31A (Tc)
Technology:
GaNFET (Gallium Nitride)
Model Number:
IGOT60R070D1AUMA3
Introduction
N-Channel 600 V 31A (Tc) 125W (Tc) Surface Mount PG-DSO-20-87
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