english
G3R20MT12K
manufacturer:
GeneSiC Semiconductor
Description:
SIC MOSFET N-CH 128A TO247-4
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.69V @ 15mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-4
Gate Charge (Qg) (Max) @ Vgs:
219 NC @ 15 V
Rds On (Max) @ Id, Vgs:
24mOhm @ 60A, 15V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V
Package:
Tube
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
±15V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
5873 PF @ 800 V
Mounting Type:
Through Hole
Series:
G3R™
Supplier Device Package:
TO-247-4
Mfr:
GeneSiC Semiconductor
Current - Continuous Drain (Id) @ 25°C:
128A (Tc)
Power Dissipation (Max):
542W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
G3R20
Model Number:
G3R20MT12K
Introduction
N-Channel 1200 V 128A (Tc) 542W (Tc) Through Hole TO-247-4
Send RFQ
Stock:
MOQ: