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G3R12MT12K
manufacturer:
GeneSiC Semiconductor
Description:
1200V 12M TO-247-4 G3R SIC MOSFE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.7V @ 50mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-4
Gate Charge (Qg) (Max) @ Vgs:
288 NC @ 15 V
Rds On (Max) @ Id, Vgs:
13mOhm @ 100A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Package:
Tube
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
+22V, -10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
9335 PF @ 800 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-4
Mfr:
GeneSiC Semiconductor
Current - Continuous Drain (Id) @ 25°C:
157A (Tc)
Power Dissipation (Max):
567W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
G3R12M
Model Number:
G3R12MT12K
Introduction
N-Channel 1200 V 157A (Tc) 567W (Tc) Through Hole TO-247-4
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