SSM3K339R,LF
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.2V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-23-3 Flat Leads
Gate Charge (Qg) (Max) @ Vgs:
1.1 NC @ 4.2 V
Rds On (Max) @ Id, Vgs:
185mOhm @ 1A, 8V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 8V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
130 PF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSVII-H
Supplier Device Package:
SOT-23F
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM3K339
Model Number:
SSM3K339R,LF
Introduction
N-Channel 40 V 2A (Ta) 1W (Ta) Surface Mount SOT-23F
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