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SI2308CDS-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 60V 2.6A SOT23-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
4 NC @ 10 V
Rds On (Max) @ Id, Vgs:
144mOhm @ 1.9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
105 PF @ 30 V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
SOT-23-3 (TO-236)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
2.6A (Tc)
Power Dissipation (Max):
1.6W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI2308
Model Number:
SI2308CDS-T1-GE3
Introduction
N-Channel 60 V 2.6A (Tc) 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)
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