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TPN19008QM,LQ
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 80V 34A 8TSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 200µA
Operating Temperature:
175°C
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
16 NC @ 10 V
Rds On (Max) @ Id, Vgs:
19mOhm @ 17A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1400 PF @ 40 V
Mounting Type:
Surface Mount
Series:
U-MOSX-H
Supplier Device Package:
8-TSON Advance (3.1x3.1)
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
34A (Tc)
Power Dissipation (Max):
630mW (Ta), 57W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPN19008
Model Number:
TPN19008QM,LQ
Introduction
N-Channel 80 V 34A (Tc) 630mW (Ta), 57W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
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