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SI5442DU-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 20V 25A PPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
900mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® ChipFET™ Single
Gate Charge (Qg) (Max) @ Vgs:
45 NC @ 8 V
Rds On (Max) @ Id, Vgs:
10mOhm @ 8A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1700 PF @ 10 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® ChipFet Single
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Power Dissipation (Max):
3.1W (Ta), 31W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI5442
Model Number:
SI5442DU-T1-GE3
Introduction
N-Channel 20 V 25A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFet Single
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