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SI3477DV-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET P-CH 12V 8A 6TSOP
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs:
90 NC @ 10 V
Rds On (Max) @ Id, Vgs:
17.5mOhm @ 9A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
12 V
Vgs (Max):
±10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2600 PF @ 6 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
6-TSOP
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Power Dissipation (Max):
2W (Ta), 4.2W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI3477
Model Number:
SI3477DV-T1-GE3
Introduction
P-Channel 12 V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
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