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TPN22006NH,LQ
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 60V 9A 8TSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 100µA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
12 NC @ 10 V
Rds On (Max) @ Id, Vgs:
22mOhm @ 4.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
710 PF @ 30 V
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
8-TSON Advance (3.3x3.3)
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Power Dissipation (Max):
700mW (Ta), 18W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPN22006
Model Number:
TPN22006NH,LQ
Introduction
N-Channel 60 V 9A (Ta) 700mW (Ta), 18W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
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