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FQT1N80TF-WS
manufacturer:
onsemi
Description:
MOSFET N-CH 800V 200MA SOT223-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-3
Gate Charge (Qg) (Max) @ Vgs:
7.2 NC @ 10 V
Rds On (Max) @ Id, Vgs:
20Ohm @ 100mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
195 PF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
SOT-223-3
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
200mA (Tc)
Power Dissipation (Max):
2.1W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQT1N80
Model Number:
FQT1N80TF-WS
Introduction
N-Channel 800 V 200mA (Tc) 2.1W (Tc) Surface Mount SOT-223-3
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