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SQS160ELNW-T1_GE3
manufacturer:
Vishay Siliconix
Description:
AUTOMOTIVE N-CHANNEL 60 V (D-S)
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
PowerPAK® 1212-8SLW
Gate Charge (Qg) (Max) @ Vgs:
71 NC @ 10 V
Rds On (Max) @ Id, Vgs:
4.3mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3866 PF @ 25 V
Mounting Type:
Surface Mount, Wettable Flank
Series:
Automotive, AEC-Q101, TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® 1212-8SLW
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
141A (Tc)
Power Dissipation (Max):
113W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQS160
Model Number:
SQS160ELNW-T1_GE3
Introduction
N-Channel 60 V 141A (Tc) 113W (Tc) Surface Mount, Wettable Flank PowerPAK® 1212-8SLW
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