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BSC080P03LSGAUMA1
manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 30V 16A/30A TDSON-8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
122.4 NC @ 10 V
Rds On (Max) @ Id, Vgs:
8mOhm @ 30A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±25V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
6140 PF @ 15 V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TDSON-8-3
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
16A (Ta), 30A (Tc)
Power Dissipation (Max):
2.5W (Ta), 89W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSC080
Model Number:
BSC080P03LSGAUMA1
Introduction
P-Channel 30 V 16A (Ta), 30A (Tc) 2.5W (Ta), 89W (Tc) Surface Mount PG-TDSON-8-3
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