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TK110E10PL,S1X
manufacturer:
Toshiba Semiconductor and Storage
Description:
X35 PB-F POWER MOSFET TRANSISTOR
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 300µA
Operating Temperature:
175°C
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
33 NC @ 10 V
Rds On (Max) @ Id, Vgs:
10.7mOhm @ 21A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2040 PF @ 50 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)
Power Dissipation (Max):
87W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK110E10
Model Number:
TK110E10PL,S1X
Introduction
N-Channel 100 V 42A (Tc) 87W (Tc) Through Hole TO-220
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