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SIJH112E-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 100V 23A/225A PPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Vgs(th) (Max) @ Id:
4V @ 250µA
Series:
-
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
160 NC @ 10 V
Supplier Device Package:
PowerPAK® 8 X 8
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 20A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
8050 PF @ 50 V
Drain To Source Voltage (Vdss):
100 V
Power Dissipation (Max):
3.3W (Ta), 333W (Tc)
Package / Case:
8-PowerTDFN
Current - Continuous Drain (Id) @ 25°C:
23A (Ta), 225A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIJH112
Model Number:
SIJH112E-T1-GE3
Introduction
N-Channel 100 V 23A (Ta), 225A (Tc) 3.3W (Ta), 333W (Tc) Surface Mount PowerPAK® 8 x 8
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