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IXTP08N100D2
manufacturer:
IXYS
Description:
MOSFET N-CH 1000V 800MA TO220AB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
Depletion Mode
Vgs(th) (Max) @ Id:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
14.6 NC @ 5 V
Rds On (Max) @ Id, Vgs:
21Ohm @ 400mA, 0V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
-
Package:
Tube
Drain To Source Voltage (Vdss):
1000 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
325 PF @ 25 V
Mounting Type:
Through Hole
Series:
Depletion
Supplier Device Package:
TO-220-3
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
800mA (Tc)
Power Dissipation (Max):
60W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTP08
Model Number:
IXTP08N100D2
Introduction
N-Channel 1000 V 800mA (Tc) 60W (Tc) Through Hole TO-220-3
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