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IPP80P03P4L04AKSA1
manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 30V 80A TO220-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 253µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
160 NC @ 10 V
Rds On (Max) @ Id, Vgs:
4.4mOhm @ 80A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
+5V, -16V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
11300 PF @ 25 V
Mounting Type:
Through Hole
Series:
OptiMOS™
Supplier Device Package:
PG-TO220-3-1
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Power Dissipation (Max):
137W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPP80P03
Model Number:
IPP80P03P4L04AKSA1
Introduction
P-Channel 30 V 80A (Tc) 137W (Tc) Through Hole PG-TO220-3-1
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