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IPI045N10N3GXKSA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 100A TO262-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 150µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
117 NC @ 10 V
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tube
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
8410 PF @ 50 V
Mounting Type:
Through Hole
Series:
OptiMOS™
Supplier Device Package:
PG-TO262-3
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Power Dissipation (Max):
214W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPI045
Model Number:
IPI045N10N3GXKSA1
Introduction
N-Channel 100 V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3
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