IXFY26N30X3
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.5V @ 500µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
22 NC @ 10 V
Rds On (Max) @ Id, Vgs:
66mOhm @ 13A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
300 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1465 PF @ 25 V
Mounting Type:
Surface Mount
Series:
HiPerFET™, Ultra X3
Supplier Device Package:
TO-252AA
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
Power Dissipation (Max):
170W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFY26
Model Number:
IXFY26N30X3
Introduction
N-Channel 300 V 26A (Tc) 170W (Tc) Surface Mount TO-252AA
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