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SCT040H65G3AG
manufacturer:
STMicroelectronics
Description:
AUTOMOTIVE-GRADE SILICON CARBIDE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.2V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Gate Charge (Qg) (Max) @ Vgs:
39.5 NC @ 18 V
Rds On (Max) @ Id, Vgs:
55mOhm @ 20A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
+18V, -5V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
920 PF @ 400 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
H2PAK-7
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Power Dissipation (Max):
221W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCT040
Model Number:
SCT040H65G3AG
Introduction
N-Channel 650 V 30A (Tc) 221W (Tc) Surface Mount H2PAK-7
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