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IMW65R030M1HXKSA1
manufacturer:
Infineon Technologies
Description:
SILICON CARBIDE MOSFET, PG-TO247
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5.7V @ 8.8mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
48 NC @ 18 V
Rds On (Max) @ Id, Vgs:
42mOhm @ 29.5A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Package:
Tube
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
+20V, -2V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1643 PF @ 400 V
Mounting Type:
Through Hole
Series:
CoolSiC™
Supplier Device Package:
PG-TO247-3-41
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
58A (Tc)
Power Dissipation (Max):
197W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
IMW65R
Model Number:
IMW65R030M1HXKSA1
Introduction
N-Channel 650 V 58A (Tc) 197W (Tc) Through Hole PG-TO247-3-41
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