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AIMW120R035M1HXKSA1
manufacturer:
Infineon Technologies
Description:
1200V COOLSIC MOSFET PG-TO247-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
59 NC @ 18 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
2130 PF @ 800 V
Series:
Automotive, AEC-Q101, CoolSiC™
Vgs (Max):
+23V, -7V
Vgs(th) (Max) @ Id:
5.7V @ 10mA
Supplier Device Package:
PG-TO247-3-41
Rds On (Max) @ Id, Vgs:
46mOhm @ 25A, 18V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Power Dissipation (Max):
228W (Tc)
Package / Case:
TO-247-3
Drain To Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
52A (Tc)
Technology:
SiCFET (Silicon Carbide)
FET Feature:
-
Model Number:
AIMW120R035M1HXKSA1
Introduction
N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-3-41
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