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SI8800EDB-T2-E1
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 20V 4MICROFOOT
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
8.3 NC @ 8 V
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
TrenchFET®
Vgs (Max):
±8V
Vgs(th) (Max) @ Id:
1V @ 250µA
Supplier Device Package:
4-Microfoot
Rds On (Max) @ Id, Vgs:
80mOhm @ 1A, 4.5V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Power Dissipation (Max):
500mW (Ta)
Package / Case:
4-XFBGA, CSPBGA
Drain To Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI8800
Model Number:
SI8800EDB-T2-E1
Introduction
N-Channel 20 V 2A (Ta) 500mW (Ta) Surface Mount 4-Microfoot
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