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SSM3J143TU,LXHF
manufacturer:
Toshiba Semiconductor and Storage
Description:
SMOS P-CH VDSS:-20V VGSS:-8/+6V
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
12.8 NC @ 4.5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
840 PF @ 10 V
Series:
Automotive, AEC-Q101, U-MOSVI
Vgs (Max):
+6V, -8V
Vgs(th) (Max) @ Id:
1V @ 1mA
Supplier Device Package:
UFM
Rds On (Max) @ Id, Vgs:
29.8mOhm @ 3A, 4.5V
Mfr:
Toshiba Semiconductor And Storage
Operating Temperature:
150°C
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Power Dissipation (Max):
500mW (Ta)
Package / Case:
3-SMD, Flat Leads
Drain To Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
5.5A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SSM3J143TU,LXHF
Introduction
P-Channel 20 V 5.5A (Ta) 500mW (Ta) Surface Mount UFM
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