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RV8C010UNHZGG2CR
manufacturer:
Rohm Semiconductor
Description:
MOSFET N-CH 20V 1A DFN1010-3W
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
FET Type:
N-Channel
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
Automotive, AEC-Q101
Vgs (Max):
±8V
Vgs(th) (Max) @ Id:
1V @ 1mA
Supplier Device Package:
DFN1010-3W
Rds On (Max) @ Id, Vgs:
470mOhm @ 500mA, 4.5V
Mfr:
Rohm Semiconductor
Operating Temperature:
150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
40 PF @ 10 V
Drain To Source Voltage (Vdss):
20 V
Power Dissipation (Max):
1W
Package / Case:
3-XFDFN
Current - Continuous Drain (Id) @ 25°C:
1A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RV8C010
Model Number:
RV8C010UNHZGG2CR
Introduction
N-Channel 20 V 1A (Ta) 1W Surface Mount DFN1010-3W
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