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IPN50R1K4CEATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 500V 4.8A SOT223
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 70µA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs:
8.2 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 900mA, 13V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
13V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
500 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
178 PF @ 100 V
Mounting Type:
Surface Mount
Series:
CoolMOS™ CE
Supplier Device Package:
PG-SOT223-3
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
4.8A (Tc)
Power Dissipation (Max):
5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPN50R1
Model Number:
IPN50R1K4CEATMA1
Introduction
N-Channel 500 V 4.8A (Tc) 5W (Tc) Surface Mount PG-SOT223-3
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