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SI8487DB-T1-E1
manufacturer:
Vishay Siliconix
Description:
MOSFET P-CH 30V 4MICROFOOT
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
4-UFBGA
Gate Charge (Qg) (Max) @ Vgs:
80 NC @ 10 V
Rds On (Max) @ Id, Vgs:
31mOhm @ 2A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2240 PF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
4-Microfoot
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
4.9A (Ta)
Power Dissipation (Max):
1.1W (Ta), 2.7W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI8487
Model Number:
SI8487DB-T1-E1
Introduction
P-Channel 30 V 4.9A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot
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