ZVN2110ASTZ
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds:
75 PF @ 25 V
Series:
-
Vgs (Max):
±20V
Package:
Cut Tape (CT)
Tape & Box (TB)
Supplier Device Package:
E-Line (TO-92 Compatible)
Rds On (Max) @ Id, Vgs:
4Ohm @ 1A, 10V
Mfr:
Diodes Incorporated
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
700mW (Ta)
Package / Case:
E-Line-3
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
320mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ZVN2110
Model Number:
ZVN2110ASTZ
Introduction
N-Channel 100 V 320mA (Ta) 700mW (Ta) Through Hole E-Line (TO-92 compatible)
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