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BSZ180P03NS3EGATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 30V 9A/39.5A TSDSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.1V @ 48µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
30 NC @ 10 V
Rds On (Max) @ Id, Vgs:
18mOhm @ 20A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±25V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2220 PF @ 15 V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TSDSON-8
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
9A (Ta), 39.5A (Tc)
Power Dissipation (Max):
2.1W (Ta), 40W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSZ180
Model Number:
BSZ180P03NS3EGATMA1
Introduction
P-Channel 30 V 9A (Ta), 39.5A (Tc) 2.1W (Ta), 40W (Tc) Surface Mount PG-TSDSON-8
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