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DMT67M8LPSW-13
manufacturer:
Diodes Incorporated
Description:
MOSFET N-CH 60V 17.3A/82A PWRDI
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
37.5 NC @ 10 V
Rds On (Max) @ Id, Vgs:
6.2mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2130 PF @ 30 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
PowerDI5060-8 (Type Q)
Mfr:
Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C:
17.3A (Ta), 82A (Tc)
Power Dissipation (Max):
2.8W (Ta), 62.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMT67
Model Number:
DMT67M8LPSW-13
Introduction
N-Channel 60 V 17.3A (Ta), 82A (Tc) 2.8W (Ta), 62.5W (Tc) Surface Mount PowerDI5060-8 (Type Q)
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