english
SI8409DB-T1-E1
manufacturer:
Vishay Siliconix
Description:
MOSFET P-CH 30V 4.6A 4MICROFOOT
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
26 NC @ 4.5 V
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
TrenchFET®
Vgs (Max):
±12V
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Supplier Device Package:
4-Microfoot
Rds On (Max) @ Id, Vgs:
46mOhm @ 1A, 4.5V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Power Dissipation (Max):
1.47W (Ta)
Package / Case:
4-XFBGA, CSPBGA
Drain To Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
4.6A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI8409
Model Number:
SI8409DB-T1-E1
Introduction
P-Channel 30 V 4.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot
Send RFQ
Stock:
MOQ: