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SI4116DY-T1-E3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 25V 18A 8SO
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
56 NC @ 10 V
Rds On (Max) @ Id, Vgs:
8.6mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
25 V
Vgs (Max):
±12V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1925 PF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
8-SOIC
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Power Dissipation (Max):
2.5W (Ta), 5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4116
Model Number:
SI4116DY-T1-E3
Introduction
N-Channel 25 V 18A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
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