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SQJ123ELP-T1_GE3
manufacturer:
Vishay Siliconix
Description:
AUTOMOTIVE P-CHANNEL 12 V (D-S)
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
180 NC @ 4.5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
11680 PF @ 6 V
Series:
Automotive, AEC-Q101, TrenchFET®
Vgs (Max):
±8V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Supplier Device Package:
PowerPAK® SO-8
Rds On (Max) @ Id, Vgs:
4mOhm @ 10A, 4.5V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Power Dissipation (Max):
375W (Tc)
Package / Case:
PowerPAK® SO-8
Drain To Source Voltage (Vdss):
12 V
Current - Continuous Drain (Id) @ 25°C:
238A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SQJ123ELP-T1_GE3
Introduction
P-Channel 12 V 238A (Tc) 375W (Tc) Surface Mount PowerPAK® SO-8
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