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SQJ488EP-T1_GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 100V 42A PPAK SO-8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
27 NC @ 10 V
Rds On (Max) @ Id, Vgs:
21mOhm @ 7.4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
979 PF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
PowerPAK® SO-8
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)
Power Dissipation (Max):
83W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQJ488
Model Number:
SQJ488EP-T1_GE3
Introduction
N-Channel 100 V 42A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
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