DN2530N3-G
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
Depletion Mode
Product Status:
Active
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
-
Input Capacitance (Ciss) (Max) @ Vds:
300 PF @ 25 V
Series:
-
Vgs (Max):
±20V
Package:
Bag
Supplier Device Package:
TO-92 (TO-226)
Rds On (Max) @ Id, Vgs:
12Ohm @ 150mA, 0V
Mfr:
Microchip Technology
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
0V
Power Dissipation (Max):
740mW (Ta)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Drain To Source Voltage (Vdss):
300 V
Current - Continuous Drain (Id) @ 25°C:
175mA (Tj)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DN2530
Model Number:
DN2530N3-G
Introduction
N-Channel 300 V 175mA (Tj) 740mW (Ta) Through Hole TO-92 (TO-226)
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