STB8NM60D
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
18 NC @ 10 V
Rds On (Max) @ Id, Vgs:
1Ohm @ 2.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
380 PF @ 25 V
Mounting Type:
Surface Mount
Series:
MDmesh™
Supplier Device Package:
D2PAK
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Power Dissipation (Max):
100W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB8NM60
Model Number:
STB8NM60D
Introduction
N-Channel 600 V 8A (Tc) 100W (Tc) Surface Mount D2PAK
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