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BSC004NE2LS5ATMA1
manufacturer:
Infineon Technologies
Description:
TRENCH <= 40V
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
238 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
11000 PF @ 12.5 V
Series:
OptiMOS™
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2V @ 10mA
Supplier Device Package:
PG-TDSON-8
Rds On (Max) @ Id, Vgs:
0.45mOhm @ 30A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
2.5W (Ta), 188W (Tc)
Package / Case:
8-PowerTDFN
Drain To Source Voltage (Vdss):
25 V
Current - Continuous Drain (Id) @ 25°C:
40A (Ta), 479A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
BSC004NE2LS5ATMA1
Introduction
N-Channel 25 V 40A (Ta), 479A (Tc) 2.5W (Ta), 188W (Tc) Surface Mount PG-TDSON-8
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