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BSB028N06NN3GXUMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 60V 22A/90A 2WDSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 102µA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
3-WDSON
Gate Charge (Qg) (Max) @ Vgs:
143 NC @ 10 V
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
12000 PF @ 30 V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
MG-WDSON-2, CanPAK M™
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
22A (Ta), 90A (Tc)
Power Dissipation (Max):
2.2W (Ta), 78W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSB028
Model Number:
BSB028N06NN3GXUMA1
Introduction
N-Channel 60 V 22A (Ta), 90A (Tc) 2.2W (Ta), 78W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
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