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R6009JNJGTL
manufacturer:
Rohm Semiconductor
Description:
MOSFET N-CH 600V 9A LPTS
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
7V @ 1.38mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
22 NC @ 15 V
Rds On (Max) @ Id, Vgs:
585mOhm @ 4.5A, 15V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
645 PF @ 100 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
LPTS
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Power Dissipation (Max):
125W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
R6009
Model Number:
R6009JNJGTL
Introduction
N-Channel 600 V 9A (Tc) 125W (Tc) Surface Mount LPTS
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