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IPP129N10NF2SAKMA1
manufacturer:
Infineon Technologies
Description:
TRENCH >=100V
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.8V @ 30µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
28 NC @ 10 V
Rds On (Max) @ Id, Vgs:
12.9mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tube
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1300 PF @ 50 V
Mounting Type:
Through Hole
Series:
StrongIRFET™ 2
Supplier Device Package:
PG-TO220-3
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
12A (Ta), 52A (Tc)
Power Dissipation (Max):
3.8W (Ta), 71W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPP129N
Model Number:
IPP129N10NF2SAKMA1
Introduction
N-Channel 100 V 12A (Ta), 52A (Tc) 3.8W (Ta), 71W (Tc) Through Hole PG-TO220-3
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