SUP70101EL-GE3
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
190 NC @ 10 V
FET Feature:
-
Product Status:
Active
Mounting Type:
Through Hole
Package:
Tube
Input Capacitance (Ciss) (Max) @ Vds:
7000 PF @ 50 V
Series:
TrenchFET®
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
TO-220AB
Package / Case:
TO-220-3
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
375W (Tc)
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SUP70101
Model Number:
SUP70101EL-GE3
Introduction
P-Channel 100 V 120A (Tc) 375W (Tc) Through Hole TO-220AB
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