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BTS282ZE3180AATMA2
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 49V 80A TO263-7
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
Temperature Sensing Diode
Vgs(th) (Max) @ Id:
2V @ 240µA
Operating Temperature:
-40°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Gate Charge (Qg) (Max) @ Vgs:
232 NC @ 10 V
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 36A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
49 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
4800 PF @ 25 V
Mounting Type:
Surface Mount
Series:
TEMPFET®
Supplier Device Package:
PG-TO263-7-1
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BTS282
Model Number:
BTS282ZE3180AATMA2
Introduction
N-Channel 49 V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-7-1
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