IRF250P224
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 270µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
203 NC @ 10 V
Rds On (Max) @ Id, Vgs:
12mOhm @ 58A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
250 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
9915 PF @ 50 V
Mounting Type:
Through Hole
Series:
StrongIRFET™
Supplier Device Package:
TO-247AC
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
96A (Tc)
Power Dissipation (Max):
313W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF250
Model Number:
IRF250P224
Introduction
N-Channel 250 V 96A (Tc) 313W (Tc) Through Hole TO-247AC
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