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MSC080SMA120S
manufacturer:
Microchip Technology
Description:
SICFET N-CH 1200V 35A D3PAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Gate Charge (Qg) (Max) @ Vgs:
64 NC @ 20 V
Rds On (Max) @ Id, Vgs:
100mOhm @ 15A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Tube
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
+23V, -10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
838 PF @ 1000 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D3PAK
Mfr:
Microchip Technology
Current - Continuous Drain (Id) @ 25°C:
35A
Power Dissipation (Max):
182W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
MSC080
Model Number:
MSC080SMA120S
Introduction
N-Channel 1200 V 35A 182W (Tc) Surface Mount D3PAK
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