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SPW55N80C3FKSA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 800V 54.9A TO247-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.9V @ 3.3mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
288 NC @ 10 V
Rds On (Max) @ Id, Vgs:
85mOhm @ 32.6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
800 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
7520 PF @ 100 V
Mounting Type:
Through Hole
Series:
CoolMOS™ C3
Supplier Device Package:
PG-TO247-3
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
54.9A (Tc)
Power Dissipation (Max):
500W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SPW55N80
Model Number:
SPW55N80C3FKSA1
Introduction
N-Channel 800 V 54.9A (Tc) 500W (Tc) Through Hole PG-TO247-3
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