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TK62N60W,S1VF
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 600V 61.8A TO247
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.7V @ 3.1mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
180 NC @ 10 V
Rds On (Max) @ Id, Vgs:
40mOhm @ 30.9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
6500 PF @ 300 V
Mounting Type:
Through Hole
Series:
DTMOSIV
Supplier Device Package:
TO-247
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
61.8A (Ta)
Power Dissipation (Max):
400W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK62N60
Model Number:
TK62N60W,S1VF
Introduction
N-Channel 600 V 61.8A (Ta) 400W (Tc) Through Hole TO-247
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