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SCTW100N65G2AG
manufacturer:
STMicroelectronics
Description:
SICFET N-CH 650V 100A HIP247
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 5mA
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
162 NC @ 18 V
Rds On (Max) @ Id, Vgs:
26mOhm @ 50A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Package:
Tube
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3315 PF @ 520 V
Mounting Type:
Through Hole
Series:
Automotive, AEC-Q101
Supplier Device Package:
HiP247™
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Power Dissipation (Max):
420W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCTW100
Model Number:
SCTW100N65G2AG
Introduction
N-Channel 650 V 100A (Tc) 420W (Tc) Through Hole HiP247™
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