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IXFN50N120SK
manufacturer:
IXYS
Description:
SICFET N-CH 1200V 48A SOT227B
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.8V @ 10mA
Operating Temperature:
-40°C ~ 175°C (TJ)
Package / Case:
SOT-227-4, MiniBLOC
Gate Charge (Qg) (Max) @ Vgs:
115 NC @ 20 V
Rds On (Max) @ Id, Vgs:
52mOhm @ 40A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Tube
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
+20V, -5V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1895 PF @ 1000 V
Mounting Type:
Chassis Mount
Series:
-
Supplier Device Package:
SOT-227B
Mfr:
IXYS
Current - Continuous Drain (Id) @ 25°C:
48A (Tc)
Power Dissipation (Max):
-
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
IXFN50
Model Number:
IXFN50N120SK
Introduction
N-Channel 1200 V 48A (Tc) Chassis Mount SOT-227B
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